switche s - c hip 7 7 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC971 pin mmic high isolation spdt switch, 18 - 40 ghz features functional diagram general description t he h m c 971 is a broadband high isolation pi n s p d t mm ic chip. c overing 18 to 40 g h z, the switch features >55 db isolation at lower frequencies and >45 db at higher frequencies. t he switch operates using complementary negative control voltage logic lines of 0/-10v. all data is measured with the chip in a 50 ohm test fxture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). h igh i solation: 40 db low i nsertion loss: 1.6 db h igh linearity: +43 dbm i nput ip 3 h igh p ower h andling: +34 dbm i nput p 1db die size: 2.21 x 1.26 x 0.1 mm electrical specifcations, t a = +25 c, with 0/-10v control, 50 ohm system typical applications t he h m c 971 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military radios, radar & ecm ? space systems ? test instrumentation v01.0711 p arameter frequency min. t yp. max. units insertion loss rfc to rf1 18 - 28 g h z 28 - 32 g h z 32 - 40 g h z 1.0 1.3 1.5 1.3 1.7 1.9 db db db insertion loss rfc to rf2 18 - 28 g h z 28 - 32 g h z 32 - 40 g h z 1.0 1.3 1.5 1.3 1.7 1.9 db db db i solation 34 40 db return loss on state 18 - 30 g h z 30 - 40 g h z 17 12 db db i nput p ower for 1 db c ompression 34 dbm i nput t hird order i ntercept ( t wo- t one i nput p ower= +7 dbm e ach t one, 1 m h z t one separation) 43 dbm
switche s - c hip 7 7 - 2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC971 v01.0711 pin mmic high isolation spdt switch, 18 - 40 ghz -3 -2.4 -1.8 -1.2 -0.6 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 +25c +85c -55c frequency (ghz) insertion loss (db) -80 -70 -60 -50 -40 -30 -20 -10 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 rfc/rf1 rfc/rf2 rf1/rf2 rf1 on rf1/rf2 rf2 on frequency (ghz) isolation (db) -3 -2.5 -2 -1.5 -1 -0.5 0 20 22 24 26 28 30 32 34 input power (dbm) insertion loss (db) -3 -2.4 -1.8 -1.2 -0.6 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 +25c +85c -55c frequency (ghz) insertion loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 rfc rf1 rf2 frequency (ghz) return loss (db) -3 -2.5 -2 -1.5 -1 -0.5 0 20 22 24 26 28 30 32 34 input power (dbm) insertion loss (db) insertion loss vs. pin, rfc to rf1, f = 25 ghz insertion loss vs. pin, rfc to rf2, f = 25 ghz isolation return loss insertion loss, rfc to rf1 isolation loss, rfc to rf2
switche s - c hip 7 7 - 3 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings rf input power 35 dbm negative c ontrol voltage -15 v p ositive bias c urrent 80 ma storage t emperature -65 to +150 c operating t emperature -55 to +85 c electrostatic sensitive device observe handling precautions equivalent schematic HMC971 v01.0711 pin mmic high isolation spdt switch, 18 - 40 ghz ip3 rfc to rf1 and rfc to rf2 control voltages state rfc - rf1 rfc - rf2 c n t l1 c n t l2 1 i l i sol -10v +30ma / 1.29v 2 i sol i l +30ma / 1.29v -10v [note 1] diodes are reversed biased for the insertion path. [note 2] diodes are forward biased for the isolation path. t he forward voltage across the diodes is 1.29v. 30 40 50 60 70 20 22 24 26 28 30 32 34 36 38 40 rfc/rf1 rfc/rf2 frequency (ghz) ip3 (dbm)
switche s - c hip 7 7 - 4 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no te s: 1. all dimensions are in inches [mm] 2. d ie thic kn e ss i s .004 3. typical bond pad is .004 square 4. ba c ks i d e m et al i za ti on: gold 5. backside metal is ground 6. bond p ad m et al i za ti on: gold 7. no connection required for unlabled bond pads. 8. overall die size .002 die packaging information [1] standard alternate g p -2 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC971 v01.0711 pin mmic high isolation spdt switch, 18 - 40 ghz
switche s - c hip 7 7 - 5 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC971 v01.0711 pin mmic high isolation spdt switch, 18 - 40 ghz pad descriptions p ad number function description i nterface schematic 1 rf1 rf signal contains dc control voltage.. external dc blocking capacitor is required. 2 rfc rf common port, this port is ac coupled. 3 rf2 rf signal contains dc control voltage. external dc blocking capacitor is required. 4 c n t l1 switch control input, see c ontrol voltages table. 5 c n t l2 switch control input, see c ontrol voltage table.
switche s - c hip 7 7 - 6 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics t he die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general h andling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. t ypical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based e sd protective containers, and then sealed in an e sd protective bag for shipment. once the sealed e sd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. do no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow e sd precautions to protect against e sd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t he chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. t he mounting surface should be clean and fat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (dc bias, if1 and if2) or ribbon bond (rf and lo ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. t hermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultra - sonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. HMC971 v01.0711 pin mmic high isolation spdt switch, 18 - 40 ghz
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